抗辐照SOI256kB只读存储器的ESD设计

ESD设计技术已成为业界提升SOI电路可靠性的一个瓶颈技术。文章介绍了一款具有抗辐照能力、基于SOI／CMOS工艺技术研制的容量为256kB只读存储器电路的ESD设计方案。结合电路特点详细分析了其ESD设计的难点，阐述了从工艺、器件和电路三个方面如何密切配合，进行SOI电路ESD设计的分析思路和解决方法。电路基于0．8...

ESD Design for Radiation-hardened SOI 256kB Read-only Memory

ESD design technology has become a SOI bottleneck technology to enhance the reliability of the SOI circuit. The ESD protection design solution of radiation-hardened 256kB ROM based on SOI/CMOS process is proposed in this paper. Combined with circuit features, detailed analyses for the ESD design difficulties of this chip are proposed in the paper. The analysis and the solving method how to closely cooperate process, components and circuits three aspects for ESD design of SOI circuit are described. Based on 0.8 μ m 1P3M partially-depletion SOI/CMOS process, its HBM ESD level reaches 4kV by using the ESD design methods and networks.