Preparation and characterization of Ba1 − xSrxTiO3 thin films deposited on Pt/SiO2/Si by sol-gel method |
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| Authors: | Ru-Bing Zhang Chun-Sheng Yang Gui-Pu Ding Jie Feng |
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| Affiliation: | Key Laboratory for Thin Film and Microfabrication Technology of Ministry of Education, Research Institute of Micro/Nanometer Science and Technology, Shanghai Jiaotong University, Shanghai 200030, PR China |
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| Abstract: | BST thin films have been investigated as potential candidates for use in frequency agile microwave circuit devices. Stoichiometric (Ba1 − xSrx)TiO3 (BST) thin films have been prepared on Pt/SiO2/Si substrates using sol-gel method. The BST films were characterized by X-ray fluorescence (XRF) spectroscopy analysis, X-ray diffraction (XRD), scanning electron microscope (SEM) and electrical measurements. The relationships of processing parameters, microstructures, and dielectric properties are discussed. The results show that the films exhibit pure perovskite phase through rapid thermal anneal at 700 °C and their grain sizes are about 20-40 nm. The dielectric constants of BST5, BST10, BST15 and BST20 are 323, 355, 382 and 405, respectively, at 80 kHz. |
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| Keywords: | A. Electronic materials A. Nanostructures A. Thin films B. Sol-gel chemistry C. X-ray diffraction D. Dielectric properties |
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