Impact of High-K Gate Dielectric Materials on Uniformly Doped Dual Gate FinFET for Analog and Digital Applications |
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| Authors: | Aditya M Rao K Srinivasa |
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| Affiliation: | 1.MEMS Research Center, Department of Electronics and Communication Engineering, KoneruLakshmaiah Education Foundation (Deemed to be University), Green Fields, Vaddeswaram, Andhra Pradesh, India
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| Abstract: | Silicon - As the technology is scaled down, there is a need to find the alternatives for the Silicon dioxide materials. The high-K gate dielectric materials are one of such kind in nanoscale... |
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