HgCdTe光导探测器比探测率的特性分析

从信号和噪声两个方面分析了HgCdTe光导探测器自身温度变化对比探测率D*的影响,并在理论层面上对比探测率的表达式进行了推导。理论分析表明:温度变化影响载流子的浓度和寿命,从而影响信号与噪声的大小,降低探测器的温度可使得探测器的比探测率得到一定程度的提高。通过MATLAB仿真,分析了组分和厚度的变化对Hg1-xCdxTe光导器件的截止波长和峰值波长的影响情况,为使HgCdTe光导探测器在工作波段内有较高的探测响应,当探测器工作在某一温度,应选择合适的组分x和厚度d。

Characteristic analysis on D* of HgCdTe photoconductive detector

The effects of temperature variation on D* of HgCdTe photoconductive detector are analyzed from signal and noise,and the expression of D* is deduced theoretically.Theoretical analysis shows that temperature change affects the concentration and lifetime of the carrier,which then has an influence on signal and noise,so D* can be improved in some degree by reducing the temperature of the detector.Through MATLAB simulation,the influence of changes of component and thickness on cutoff wavelength and peak wavelength of Hg1-xCdxTe photoconductive detector are analyzed.In order to get a higher detection response of HgCdTe photoconductive detector in the working waveband,the appropriate component x and thickness d should be selected when the detector operates in a certain temperature.