Preparation of diamondlike carbon films using nanopulse generator employing SI thyristor

Diamondlike carbon (DLC) films show high hardness, high electric resistivity, and the self‐lubricant characteristic, and many applications and synthesis methods have been reported. Pulse plasma chemical vapor deposition (CVD) is one of the synthesis methods suitable for DLC films on complicated form work, such as molding and extruding die. Ordinary, microsecond‐order pulse is used in this method. This paper describes the development of the synthesis method using nanosecond‐order pulse plasma CVD for DLC films. To realize this process, a static induction (SI) thyristor with an inductive energy storage (IES) circuit was used. Compared with microsecond, nanosecond‐order pulse plasma CVD method shows the characteristics of high electron temperature and exponential relationship between pulse frequency and growth rate. The characteristics of the thus‐obtained DLC films show two broad peaks of the disordered band at 1360 cm^?1 and the graphitic band at 1580 cm^?1 by Raman spectroscopy and hardness of 16.0 GPa and elastic modulus of 170 GPa. © 2007 Wiley Periodicals, Inc. Electr Eng Jpn, 159(4): 1–7, 2007; Published online in Wiley InterScience ( www.interscience.wiley.com ). DOI 10.1002/eej.20341