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Electrical and luminescent properties and the spectra of deep centers in GaMnN/InGaN light-emitting diodes |
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| Authors: | A. Y. Polyakov N. B. Smirnov A. V. Govorkov Jihyun Kim F. Ren G. T. Thaler R. M. Frazier B. P. Gila C. R. Abernathy S. J. Pearton I. A. Buyanova G. Y. Rudko W. M. Chen C. -C. Pan G. -T. Chen J. -I. Chyi J. M. Zavada |
| Affiliation: | (1) Institute of Rare Metals, 119017 Moscow, Russia;(2) Department of Chemical Engineering, University of Florida, 32611 Gainesville, FL;(3) Department of Materials Science and Engineering, University of Florida, USA;(4) Department of Physics and Measurement Technology, Linkoping University, S-581 83 Linkoping, Sweden;(5) Department of Electrical Engineering, National Central University, 32054 Chung-Li, Taiwan, Republic of China;(6) United States Army Research Office, Research Triangle Park, 27709, NC |
| Abstract: | Electrical and electroluminescent properties were studied for GaN/InGaN light-emitting diodes (LEDs) with the n-GaN layer up and with the top portion of the n layer made of undoped GaMnN to allow polarization modulation by applying an external magnetic field (so-called “spin-LEDs”). The contact annealing temperature was kept to 750°C, which is the thermal stability limit for retaining room-temperature magnetic ordering in the GaMnN layer. Measurable electroluminescence (EL) was obtained in these structures at threshold voltages of ∼15 V, with a lower EL signal compared to control LEDs without Mn. This is related to the existence of two parasitic junctions between the metal and the lower contact p-type layer and between the GaMnN and the n-GaN in the top contact layer. |
| Keywords: | GaN/InGaN light-emitting diodes (LEDs) electroluminescence (EL) |
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