Improvement of hot-carrier and radiation hardnesses inmetal-oxide-nitride-oxide semiconductor devices byirradiation-then-anneal treatments |
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| Authors: | Kuei-Shu Chang-Liao Jenn-Gwo Hwu |
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| Affiliation: | Dept. of Nucl. Eng., Nat. Tsing Hua Univ., Hsinchu ; |
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| Abstract: | The hardnesses of hot-carrier and radiation of metal-oxide nitride-oxide semiconductor (MONOS) devices can be improved by the irradiation-then-anneal (ITA) treatments. Each treatment includes an irradiation of Co-60 with a total dose of 1M rads(SiO2) and an anneal in N2 at 400°C for 10 min successively. This improvement can be explained by the release of SiO2/Si interfacial strain |
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