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Distribution of base dopant for transit time minimization in abipolar transistor
Authors:Winterton   S.S. Searles   S. Peters   C.J. Tarr   N.G. Pulfrey   D.L.
Affiliation:Dept. of Electron., Carleton Univ., Ottawa, Ont. ;
Abstract:A means to determine the doping profile minimizing base transit time in a bipolar transistor is presented, assuming that the width of the neutral base is held constant. It is found that the optimum profile is not close to the exponential decrease from emitter to collector predicted by earlier studies
Keywords:
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