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Selective orientation of SrBi4Ti4O15 thin films grown on buffered Si(100) substrates
Authors:T. L. Chen  X. M. Li  G. R. Li  W. D. Yu
Affiliation:1. State Key Laboratory, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Rd., Shanghai, 200050, People’s Republic of China
2. Graduate School, Chinese Academy of Sciences, Shanghai, People’s Republic of China
Abstract:Many efforts have been paid to uncouple the spontaneous polarizations of layer-structured bismuth-based ferroelectrics along different crystal orientations, obtaining these layered-structure films with non-c-axis orientations. In the paper, SrBi4Ti4O15 (m?=?4) thin films have been deposited on Pt/MgO bilayer-buffered Si(100) substrates by pulsed-laser deposition. Selective orientation of SrBi4Ti4O15 thin films mediated by different epitaxy relationships between electrode layers and MgO/Si substrates has been demonstrated. Furthermore, different hysteresis loops and remnant polarization of SrBi4Ti4O15 thin films with varied orientations have been obtained.
Keywords:
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