Effect of Bi doping on the structure and conduction mechanism of amorphous GeSe films |
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| Authors: | R. R. Romanyuk |
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| Affiliation: | 1. State Western Scientific Center, National Academy of Sciences of Ukraine, ul. Mateyka 4, Lviv, 79000, Ukraine
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| Abstract: | This paper examines the effect of Bi doping on the short-range order in amorphous (GeSe)1 ? x Bi x (0 ≤ x ≤ 0.15) films and their electrical properties. Electron diffraction results demonstrate that the structure of the films can be described by a model typical of GeSe-Bi2Se3 solid solutions. Bi doping changes the charge transport mechanism and leads to type inversion in the amorphous (GeSe)1 ? x Bi x films. |
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