| 新型GaInNAs系低功耗HBT研究进展 |
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| 引用本文： | 顾卫东,李献杰.新型GaInNAs系低功耗HBT研究进展[J].半导体技术,2002,27(9):4-8. |
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| 作者姓名： | 顾卫东 李献杰 |
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| 作者单位： | 河北半导体研究所,河北,石家庄,050051 |
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| 摘 要： | 介绍了新型GaInNAs系低功耗异质结双极晶体管(HBT)的设计思想和最新研究进展,并展望了其在低功耗高速集成电路和长波长光电集成电路方面的应用前景.
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| 关 键 词： | GaInNA s:低功耗 异质结双极晶体管 |
| 文章编号： | 1003-353X(2002)09-0004-05 |
| 修稿时间： | 2002年4月3日 |
Development of novel GaInNAs based HBT with low power dissipation |
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| GU Wei-dong,LI Xian-jie.Development of novel GaInNAs based HBT with low power dissipation[J].Semiconductor Technology,2002,27(9):4-8. |
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| Authors: | GU Wei-dong LI Xian-jie |
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| Abstract: | The design and lastest development of novel GaInNAs heterojunction bipolar transistor (HBT) with low power dissipation are reviewed. Furthermore, its promising application in low power high speed integration circuits and long wavelengh optoelectronic integration circuits is described. |
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| Keywords: | GaInNAs low power dissipation HBT |
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