A low‐voltage band‐gap reference circuit with second‐order analyses |
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| Authors: | Chao‐Jui Liang Chiu‐Chiao Chung Hongchin Lin |
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| Affiliation: | 1. Department of Electrical Engineering, National Chung‐Hsing University, Taichung, Taiwan;2. NeoEnergy Microelectronics Inc., 6F‐1, No. 26, Tai Yuen St., Chupei City, Hsinchu County, Taiwan;3. Department of Computer and Communication Engineering, Nan‐Kai University of Technology, Nantou, Taiwan |
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| Abstract: | A new band‐gap reference (BGR) circuit employing sub‐threshold current is proposed for low‐voltage operations. By employing the fraction of VBE and the sub‐threshold current source, the proposed BGR circuit with chip area of 0.029mm2 was fabricated in the standard 0.18µm CMOS triple‐well technology. It generates reference voltage of 170 mV with power consumption of 2.4µW at supply voltage of 1 V. The agreement between simulation and measurement shows that the variations of reference voltage are 1.3 mV for temperatures from ?20 to 100°C, and 1.1 mV per volt for supply voltage from 0.95 to 2.5 V, respectively. Copyright © 2010 John Wiley & Sons, Ltd. |
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| Keywords: | low‐voltage band‐gap reference sub‐threshold current voltage variation second‐order analysis |
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