Bi_(3.5)Yb_(0.5)Ti_3O_(12)铁电薄膜的制备及性能

采用溶胶-凝胶(Sol-Gel)法在Pt(111)/Ti/SiO2/Si(100)基片上淀积了Bi3.5Yb0.5Ti3O12(BYT)铁电薄膜,研究了在不同退火温度下形成的BYT薄膜的微观结构以及铁电性能方面的区别。结果发现,在610,660,710和760℃不同温度下退火的BYT薄膜的结晶度不同,退火温度越高的BYT薄膜,其结晶度越高。并且发现,BYT薄膜的剩余极化值(2Pr)在710℃以下随退火温度增高而增大,在710℃达到最大;在外加400kV/cm电场时2Pr为36.7μC/cm2,然后随退火温度上升又有所下降。

Fabrication and Characteristics of Bi_(3.5)Yb_(0.5)Ti_3O_(12) Ferroelectric Thin Films

The Bi3.5Yb0.5Ti3O12(BYT)ferroelectric thin films were deposited on Pt/Ti/SiO2/Si substrates by Sol-Gel method.The films were annealed at 610,660,710 and 760 ℃,respectively.The differences in the microstructures and ferroelectric properties of the BYT films annealed at various temperatures were studied.The results show that the crystallization level is improved with the annealing temperature.The remnant polarization(2Pr)of BYT films increases with the annealing temperature below 710 ℃,and the largest value is obtained at 710 ℃;when an electric field of 400 kV/cm is applied,the 2Pr is 36.7 μC/cm2,then the 2Pr decreases with the increase of the annealing temperature.The results show that the crystallization level is improved with the anealing temperature.The film annealed at 710 ℃ has the largest 2Pr value of 36.7 μC/cm2 at an electric field of 400 kV/cm,and then it comes down with the rise of annealing temperature.