一种新型的常通型GaN HEMT器件

对新型常通型GaN HEMT器件的特性和参数进行了研究。阐述了其静态特性、动态特性及电流崩塌问题。针对其动态特性，与相近规格的Si MOSFET器件（TK2Q60D）在开通、关断时间与栅源电压的关系方面进行了对比，探讨了常通型GaN HEMT器件在不同输入电压和不同开关频率下的电流崩塌现象，并采用Boost电路，对常通型GaN HEMT器件和Si MOSFET器件的最高工作频率能力进行了对比。实验结果表明，常通型GaN HEMT器件具有更高的工作频率，且工作频率的升高不影响电流崩塌现象。

A Novel Normally-on GaN HEMT Device

In this paper, the characteristics and parameters of a new normally-on GaN HEMT device are presented. The static characteristics, dynamic characteristics and current collapse are first analyzed. Then, in view of its dynamic characteristics, the relationships between the turn-on and turn-off time and the gate-source voltage are given, with comparison with Si MOSFET device (TK2Q60D) in the similar rating. Furthermore, the current collapse phenomenon of normally-on GaN HEMT device is investigated under different input voltages and switching frequencies. Finally, the maximum operating frequency capability of normally-on GaN HEMT device and Si MOSFET device is compared in a Boost converter. The experimental results show that the normally-on GaN HEMT devices have higher operating frequency, and the increase of the operating frequency does not affect the current collapse phenomenon.