PECVD低功率沉积氮化硅薄膜研究

为了减少太阳能电池氮化硅薄膜生产工艺中的缺陷、提高太阳能电池的转换效率,采用等离子增强化学气相沉积法在射频功率较低的条件下,对N型单晶硅片表面进行氮化硅沉积,获得与高射频功率沉积时相同膜厚和折射率的氮化硅膜,通过试验分析了低功率沉积工艺对电池电参数、对膜厚均匀性的影响。结果表明,在低功率沉积工艺条件下,有助于改善膜厚均匀性,使膜厚不均匀度由12%下降到6%,太阳能电池转换效率提高了0.05个百分点。

Research on the low-power silicon nitride film deposited by PECVD

In order to reduce the defects of the solar cell silicon nitride film during production process, improve the conversion efficiency of solar cells,using a plasma enhanced chemical vapor deposition in RF power under conditions of low,on N type silicon wafer surface of silicon nitride is deposited,obtained with high RF power deposition is the same as the film thickness and refractive index of silicon nitride through the experiment analysis of the membrane,low power deposition process of battery parameters,the uniformity of the film thickness effect. The results showed that, in low power deposition conditions, it would be helpful to improve the film thickness uniformity, and the film thickness uniformity declined from 12% to 6% ,the solar cell conversion efficiency increased by 0.05 percentage points.