Thin film temperature sensor for cryogenic region with small magnetoresistance |
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| Authors: | Tsutom Yotsuya Yoshiharu Kakehi Takekazu Ishida |
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| Affiliation: | aResearch Organization for 21st Century, Osaka Prefecture University, 1-2, Gakuencho, Naka-ku, Sakai-City 599-8570, Japan;bTechnology Research Institute of Osaka Prefecture, 2-7-1, Ayumino, Izumi-City, Osaka 594-1157, Japan;cDepartment of Physics and Electronics, Osaka Prefecture University, 1-1, Gakuencho, Nakaku, Sakai-City 599-8531, Japan;dInstitute for Nanofabrication Research, Osaka Prefecture University, 1-1, Gakuencho, Nakaku, Sakai-City 599-8531, Japan |
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| Abstract: | Chromium nitride (CrN) thin films were fabricated onto Si wafers by RF magnetron sputtering equipment in pure N2 gas. By adjusting the fabrication conditions, the film had negative temperature coefficient of resistance (TCR) below 300 K. It showed reasonable sensitivity between 300 and 1.8 K. The temperature resolution in the cryogenic temperature region was better than 1 mK. A good thermal cycle stability was observed. After 27 thermal cycles between 4 and 300 K, the coefficient of variation (CV) value was as small as 0.098% at 4 K, which corresponds to a 2.1 mK temperature shift. In addition, the thermometer was nearly insensitive to the magnetic field. The temperature shift due to magnetoresistance in a magnetic field of 9 T was less than 5 mK at 4 and 2 K. Therefore CrN can be an excellent choice of material for cryogenic temperature sensors under magnetic fields. |
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| Keywords: | Chromium nitride Thin film Temperature sensor Magnetoresistance |
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