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低介电损耗AlN陶瓷及BN—AlN基陶瓷材料研究
引用本文:张巨先. 低介电损耗AlN陶瓷及BN—AlN基陶瓷材料研究[J]. 真空电子技术, 2009, 0(4): 50-53,68
作者姓名:张巨先
作者单位:北京真空电子技术研究所,北京,100016
摘    要:首先利用化学工艺制备出烧结助剂Y2O3均匀混合的AlN粉体及BN均匀包覆AlN的复合粉体。利用无压烧结制备出AlN陶瓷及BN—AlN基复相陶瓷。通过对陶瓷显微结构、热性能及微波介电性能的研究发现,通过化学工艺,将BN包覆到AlN粉体表面,制备出显微结构均匀的AlN-20%BN(质量比)复相陶,其热导率为78.1w/m·K,在Ka波段介电常数为7.2、介电损耗最小值为13×10^-4通过材料化学工艺,将烧结助剂Y2O3均匀添加到AlN基体中,制备出热导率为154.2w/m·K,在Ka波段介电常数为8.5、介电损耗最小值为9.3×10^-4的AlN陶瓷材料。

关 键 词:AlN陶瓷  BN—AlN基复相陶瓷  低介电损耗  化学工艺

Preparation of Low Loss Tangent AlN Ceramics and BN-AlN Composites
ZHANG Ju-xian. Preparation of Low Loss Tangent AlN Ceramics and BN-AlN Composites[J]. Vacuum Electronics, 2009, 0(4): 50-53,68
Authors:ZHANG Ju-xian
Affiliation:ZHANG Ju-xian (Beijing Vacuum Electronics Research Institute, Beijing 100016, China)
Abstract:The low loss tangent AIN ceramics, which have a high thermal conductivity (154.2 W/m · K) and low loss tangent (9.3× 10^-4) at Ka frequency bands, and BN-AlN composites, which have a high thermal conductivity (78.1 W/m · K) and low loss tangent (13× 10^-4) at Ka frequency bands, have been successfully fabricated. First, AIN powders mixed homogeneous with the sintering additive Y2O3 and AIN powders coated homogeneous with BN were prepared via a chemical processing. Next, the green bodies were sintered at pressureless sintering.
Keywords:AIN ceramic  BN-AlN composites  Low loss tangent  Chemical processing
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