| In－BiCaVIG的晶体生长与性能 |
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| 引用本文： | 于含云,孙金祚.In－BiCaVIG的晶体生长与性能[J].激光技术,1995(6). |
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| 作者姓名： | 于含云 孙金祚 |
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| 作者单位： | 山东聊城师范学院光通信研究所，山东烟台大学物理系 |
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| 摘 要： | 本文报导了用助熔剂法成功地生长大尺寸掺铟ＢｉＣａＶＩＧ晶体的方法以及实验结果，介绍了该单晶在近红外区的磁光器件中的重要应用。
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| 关 键 词： | In－BiCaVIG单晶，晶体生长，饱和磁化强度，比法拉第旋转 |
Crystal growth and properties of In-BiCaVIG |
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| Yu Hanyun.Crystal growth and properties of In-BiCaVIG[J].Laser Technology,1995(6). |
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| Authors: | Yu Hanyun |
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| Abstract: | This paper reports the growth procedure of largesized in doped BiCaVIG crystal,which is made with flux technique. The experimental results show that the crystal has the features of wide transmiseion spectrum,lower saturation magnetization intensity, higher curie point, and higher ratio Faraday rotation.So the crystal has the important application in manufacturing of magnet-optical device in near infrared region. |
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| Keywords: | In- BiCaVIG single crystal crystal growth saturation magnetization specific Fara-day rotation |
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