Hybrid orientation technology and strain engineering for ultra-high speed MOSFETs |
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Authors: | T K Maiti C K Maiti |
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Affiliation: | 1. Department of Electronics and Electrical Communication Engineering, Indian Institute of Technology, Kharagpur, 721 302, India
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Abstract: | We report here RF MOSFET performance in sub-45-nm hybrid orientation CMOS technology. Based on the combination of hybrid orientation technology (HOT) and process-induced local strain engineering, MOSFET RF performance is investigated using CAD (TCAD) technology. Transistor optimization on (100) substrate via silicon nitride (Si 3 N 4 ) cap layer thickness for n-MOSFETs, Ge mole fraction optimization for p-MOSFETs on (110) substrates and channel length scaling have resulted in record RF performance, viz. the cut-off frequency, ${f_{\rm T}}$ . |
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