| Effect of Annealing on Ferroelectric Properties of Bi_ (3.25)La_(0.75)Ti_3O_ (12) Thin Films Prepared by the Sol-gel Method |
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| 引用本文： | 郭冬云. Effect of Annealing on Ferroelectric Properties of Bi_ (3.25)La_(0.75)Ti_3O_ (12) Thin Films Prepared by the Sol-gel Method[J]. 武汉理工大学学报(材料科学英文版), 2005, 0(4) |
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| 作者姓名： | 郭冬云 |
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| 作者单位： | Department of |
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| 基金项目： | FundedbytheNationalNaturalScienceFoundationofChina(No.90407023) |
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| 摘 要： | ![]()
1Introduction Therehavebeenextensiveresearcheffortstoen hancethereliabilityofperovskite basedferroelectricthinfilmsforapplicationinNVFRAM(nonvolatileferroelectric randomaccessmemory)devices[1,2].Manyferroelectricmaterials,suchasPbZrxTi1-xO3(PZT),SrBi2Ti2O…
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Effect of Annealing on Ferroelectric Properties of Bi_ (3.25)La_(0.75)Ti_3O_ (12) Thin Films Prepared by the Sol-gel Method |
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| GUO Dongyun WANG Yunbo YU Jun GAO Junxiong. Effect of Annealing on Ferroelectric Properties of Bi_ (3.25)La_(0.75)Ti_3O_ (12) Thin Films Prepared by the Sol-gel Method[J]. Journal of Wuhan University of Technology. Materials Science Edition, 2005, 0(4) |
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| Authors: | GUO Dongyun WANG Yunbo YU Jun GAO Junxiong |
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| Abstract: | ![]()
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| Keywords: | Bi_ 3.25La_ 0.75Ti_3O_ 12 ferroelectric thin film sol-gel method leakage current |
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