| 室温半导体红外光电探测器研究进展 |
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| 引用本文： | 谢天,叶新辉,夏辉,李菊柱,张帅君,姜新洋,邓伟杰,王文静,李玉莹,刘伟伟,李翔,李天信.室温半导体红外光电探测器研究进展[J].红外与毫米波学报,2020,39(5):584-595. |
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| 作者姓名： | 谢天 叶新辉 夏辉 李菊柱 张帅君 姜新洋 邓伟杰 王文静 李玉莹 刘伟伟 李翔 李天信 |
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| 作者单位： | 上海理工大学材料科学与工程学院,上海 200093;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;上海师范大学数理学院,上海 200234;中国科学院上海技术物理研究所红外物理国家重点实验室,上海 200083;上海科技大学物质科学与技术学院,上海 201210;上海理工大学材料科学与工程学院,上海 200093 |
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| 基金项目： | 中科院青促会会员( 2018276);中国科学院先导B(XDB43010200, XDB43010400) |
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| 摘 要： | 室温工作将为光子型红外探测开辟更广泛的应用，系统整理和分析了从近红外到长波红外的III–V族及Ⅱ-Ⅵ族半导体探测器的室温性能，讨论不同材料体系和器件结构的室温暗电流机制。其中InAs/GaSb等二类超晶格的短周期带间级联结构以及HgCdTe抑制俄歇过程的方案在提升中长波红外室温探测性能方面都显示出了独特的优势。这些电子学结构的设计与近年来亚波长光子结构增强耦合、降低暗电流的新进展相结合，有望实现近室温工作的高灵敏红外探测。
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| 关 键 词： | 室温红外光电探测 暗电流机制 带间级联 碲镉汞 亚波长光子结构 |
| 收稿时间： | 2019/12/31 0:00:00 |
| 修稿时间： | 2020/8/26 0:00:00 |
Research progress of room temperature semiconductor infrared photodetectors |
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| XIE Tian,YE Xin-Hui,XIA Hui,LI Ju-Zhu,ZHANG Shuai-Jun,JIANG Xin-Yang,DENG Wei-Jie,WANG Wen-Jing,LI Yu-Ying,LIU Wei-Wei,LI Xiang and LI Tian-Xin.Research progress of room temperature semiconductor infrared photodetectors[J].Journal of Infrared and Millimeter Waves,2020,39(5):584-595. |
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| Authors: | XIE Tian YE Xin-Hui XIA Hui LI Ju-Zhu ZHANG Shuai-Jun JIANG Xin-Yang DENG Wei-Jie WANG Wen-Jing LI Yu-Ying LIU Wei-Wei LI Xiang and LI Tian-Xin |
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| Affiliation: | School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Mathematics and Science College, Shanghai Normal University, Shanghai 200234, China,School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China;State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;School of Physical Science and Technology, ShanghaiTech University, Shanghai 201210, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China;Mathematics and Science College, Shanghai Normal University, Shanghai 200234, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China,School of Materials Science and Engineering, University of Shanghai for Science and Technology, Shanghai 200093, China,State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China |
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| Abstract: | |
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| Keywords: | room temperature infrared detection dark current mechanism interband cascade HgCdTe subwavelength photon structure |
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