| 薄膜AlGaInP发光二极管中不同反光镜的研究 |
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| 引用本文： | 高伟,郭伟玲,邹德恕,秦圆,蒋文静,沈光地.薄膜AlGaInP发光二极管中不同反光镜的研究[J].半导体学报,2010,31(12):124013-3. |
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| 作者姓名： | 高伟 郭伟玲 邹德恕 秦圆 蒋文静 沈光地 |
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| 基金项目： | 国家高技术研究发展计划(Grant No.2008AA03Z402,No.2009AA03A1A3) |
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| 摘 要： | 本文计算了GaP/Au 反光镜, GaP/SiO2/Au 三层ODR and GaP/ITO/Au 三层ODR的反射率随角度的变化值。制作了GaAs衬底的AlGaInP LED，Au反光镜、SiO2 ODR和ITO ODR的薄膜AlGaInP LED。在20mA下，四种样品光输出功率分别为1.04mW, 1.14mW, 2.53mW and 2.15mW。制作工艺退火后，Au扩散使Au/GaP反光镜的反射率降至9％。1/4波长的ITO和SiO2透射率不同造成了两种薄膜LED光输出功率不同。ITO ODR中加入Zn可以大大降低LED的电压，但并不影响LED的光输出。
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| 关 键 词： | 发光二极管，全方位反光镜，AlGaInP |
| 收稿时间： | 5/6/2010 9:24:56 AM |
| 修稿时间： | 8/15/2010 9:42:10 AM |
Thin film AlGaInP light emitting diodes with different reflectors |
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| Gao Wei,Guo Weiling,Zou Deshu,Qin Yuan,Jiang Wenjing and Shen Guangdi.Thin film AlGaInP light emitting diodes with different reflectors[J].Chinese Journal of Semiconductors,2010,31(12):124013-3. |
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| Authors: | Gao Wei Guo Weiling Zou Deshu Qin Yuan Jiang Wenjing and Shen Guangdi |
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| Affiliation: | Key Laboratory of Opto-Electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China;Key Laboratory of Opto-Electronics Technology of Ministry of Education, Beijing University of Technology, Beijing 100124, China |
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| Abstract: | The reflectivity versus incident angle of a GaP/Au reflector, a GaP/SiO2/Au triple ODR (omni-directional reflector) and a GaP/ITO/Au triple ODR was calculated. Compared to AlGaInP LEDs with a GaAs absorbing substrate, thin film LEDs with a Au reflector, a SiO2 ODR and an ITO ODR were fabricated. At a current of 20 mA, the optical output power of four samples was respectively 1.04, 1.14, 2.53 and 2.15 mW. The Au diffusion in the annealing process reduces the reflectivity of the Au/GaP reflector to 9%. The different transmittance of quarter-wave thickness ITO and SiO2 induces different optical output power between the SiO2 and ITO thin film LEDs. The insertion of Zn in the ITO ODR LED does not affect the light output but evidently reduces the voltage. |
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| Keywords: | LE AlGaInP ODR |
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