Electrical properties of In2Se3 layered crystals doped with cadmium,iodine, or copper |
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| Authors: | A. V. Zaslonkin Z. D. Kovalyuk I. V. Mintyanskii |
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| Affiliation: | (1) Frantsevich Institute of Materials Science Problems (Chernovtsy Branch), National Academy of Sciences of Ukraine, ul. Vil’de 5, Chernovtsy, 58001, Ukraine |
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| Abstract: | The electrical properties of nominally undoped and doped (0.1 wt % Cd, I, and Cu) In2Se3 single crystals have been studied in the range 80–400 K. Only iodine doping has been found to have a significant effect on the carrier concentration in In2Se3, raising it from 4.9 × 1017 to 1.6 × 1018 cm?3 at 300 K. The observed temperature variation of in-plane electron mobility is interpreted in terms of acoustic phonon and neutral impurity scattering. The three dopants have the strongest effect on the out-of-plane conductivity of In2Se3. |
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