Fast Full-Band Device Simulator for Wurtzite and Zincblende GaN MESFET Using a Cellular Monte Carlo Method |
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| Authors: | Shinya Yamakawa Shela Aboud Marco Saraniti Stephen M Goodnick |
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| Affiliation: | 1. Department of Electrical Engineering, Arizona State University, Tempe, AZ, 85287, USA
2. Department of Electrical and Computer Engineering, Illinois Institute of Technology, Chicago, IL, 60616, USA
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| Abstract: | A fast full-band device simulator for wurtzite and zincblende GaN using a Cellular Monte Carlo (CMC) approach is reported for wurtzite and zincblende GaN. The full-phonon dispersion relationship including anisotropic polar-optical phonon scattering is taken into account for the wurtzite GaN calculation. In the bulk simulation, the CMC model is about 30–100 times faster than the conventional Ensemble Monte Carlo model at high electric field region. This CMC model is applied to the simulator of MESFET devices, and the calculation speed is significantly improved. |
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