| Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling |
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| 作者姓名： | Deng Ning Pan Liyang Liu Zhihong Zhu Jun Chen Peiyi Peng Li |
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| 作者单位： | 清华大学微电子学研究所，北京 100084;清华大学微电子学研究所，北京 100085;清华大学微电子学研究所，北京 100086;清华大学微电子学研究所，北京 100087;清华大学微电子学研究所，北京 100088;无锡微电子研究所，无锡 214035 |
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| 摘 要： | 提出了一种用于半导体闪速存储器单元的新的Si/SiGe量子点/隧穿氧化层/多晶硅栅多层结构,该结构可以实现增强F-N隧穿的编程和擦除机制.模拟结果表明该结构具有高速和高可靠性的优点.测试结果表明该结构的工作电压比传统NAND结构的存储器单元降低了4V.采用该结构能够实现高速、低功耗和高可靠性的半导体闪速存储器.
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| 关 键 词： | 闪速存储器 SiGe量子点 增强F-N隧穿 flash memory SiGe quantum dots enhanced F-N tunneling SiGe Quantum Dots 量子点 增强 隧穿 低压 闪速存储器 Tunneling Cells Flash Memory lower high speed Experimental show operation voltage conventional full memory cells Simulation |
| 文章编号： | 0253-4177(2006)03-0454-05 |
| 收稿时间： | 10 26 2005 12:00AM |
| 修稿时间： | 12 16 2005 12:00AM |
Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling |
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| Deng Ning,Pan Liyang,Liu Zhihong,Zhu Jun,Chen Peiyi,Peng Li.Low Voltage Flash Memory Cells Using SiGe Quantum Dots for Enhancing F-N Tunneling[J].Chinese Journal of Semiconductors,2006,27(3):454-458. |
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| Authors: | Deng Ning Pan Liyang Liu Zhihong Zhu Jun Chen Peiyi and Peng Li |
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| Affiliation: | Institute of Microelectronics,Tsinghua University,Beijing 100084,China;Institute of Microelectronics,Tsinghua University,Beijing 100085,China;Institute of Microelectronics,Tsinghua University,Beijing 100086,China;Institute of Microelectronics,Tsinghua University,Beijing 100087,China;Institute of Microelectronics,Tsinghua University,Beijing 100088,China;Wuxi Microelectronics Research Institute,Wuxi 214035,China |
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| Abstract: | A novel flash memory cell with stacked structure (Si substrate/SiGe quantum dots/tunneling oxide/poly-Si floating gate) is proposed and demonstrated to achieve enhanced F-N tunneling for both programming and erasing.Simulation results indicate the new structure provides high speed and reliability.Experimental results show that the operation voltage can be as much as 4V less than that of conventional full F-N tunneling NAND memory cells.Memory cells with the proposed structure can achieve higher speed,lower voltage,and higher reliability. |
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| Keywords: | flash memory SiGe quantum dots enhanced F-N tunneling |
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