Recent progress in high-power GaInAsP lasers |
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Authors: | Oshiba S. Tamura Y. |
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Affiliation: | Oki Electr. Ind. Co. Ltd., Tokyo; |
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Abstract: | The high-power characteristics (180 mW, CW) and reliability of 1.48-μm Fabry-Perot laser diodes are studied for V-grooved inner stripe lasers grown by liquid phase epitaxy on p-type substrate (VIPS lasers). Their potential as pumping sources of erbium-doped fiber amplifiers is reported, and their power saturation behavior at several wavelengths is discussed. Aging tests were conducted at high power levels of up to 75% CW maximum power (Pmax) at -40, 25, and 70°C. The ageing power reached more than 200 mW at -40°C; however, no significant degradation was observed at any temperature level. At 25°C the median lifetime is estimated to be 60000 h, and stable operation is observed at the highest aging level (to date) of 200 mW for up to 1600 h at -40°C |
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