InSb晶体生长固液界面控制技术研究

在固液界面控制方面，对Si等成熟半导体的研究较多，而对锑化铟(InSb)材料的研究极少。对InSb晶体等径段生长过程中晶体拉速、转速和坩埚转速对固液界面形状的影响进行了模拟分析以及实际的晶体生长实验。结果表明，这三个生长参数对固液界面形状的平稳控制具有一定的效果。获得了平稳固液界面控制方法，为后续生长更低位错密度、更均匀径向电学参数分布的InSb材料打下了基础。

Study on Solid-liquid Interface Control Technology for InSb Crystal Growth

In the aspect of solid-liquid interface control, there are many studies on mature semiconductors such as Si, but few studies on indium antimonide(InSb)materials. The effects of crystal pulling speed, rotation speed and crucible rotation speed on the shape of the solid-liquid interface during the growth of the InSb crystal in equal diameter segment were simulated and the actual crystal growth experiment was carried out. The results show that these three growth parameters have a certain effect on the smooth control of the solid-liquid interface shape. A stable solid-liquid interface control method is obtained, which lays the foundation for subsequent InSb materials with lower dislocation density and more uniform radial electrical parameter distribution.