| 额外HCl和氮化对HVPE GaN生长的影响 |
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| 引用本文： | 修向前,张荣,李杰,卢佃清,毕朝霞,叶宇达,俞慧强,郑有炓.额外HCl和氮化对HVPE GaN生长的影响[J].半导体学报,2003,24(11):1171-1175. |
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| 作者姓名： | 修向前 张荣 李杰 卢佃清 毕朝霞 叶宇达 俞慧强 郑有炓 |
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| 作者单位： | 南京大学物理系,南京210093 |
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| 基金项目： | 国家重点基础研究发展规划 (No.G2 0 0 0 0 683 0 5 )，国家高技术研究发展计划 (No.2 0 0 1AA3 11110)，国家自然科学基金(批准号:699760 14,6980 60 0 6和699870 0 1)资助项目~~ |
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| 摘 要： | 在氢化物气相外延(HVPE)生长Ga N过程中,发现了一种在成核阶段向生长区添加额外HCl来改善Ga N外延薄膜质量的方法,并且讨论了额外HCl和氮化对Ga N形貌和质量的影响.两种方法都可以大幅度地改善Ga N的晶体质量和性质,但机理不同.氮化是通过在衬底表面形成Al N小岛,促进了衬底表面的成核和薄膜的融合;而添加额外HCl则被认为是通过改变生长表面的过饱和度引起快速成核从而促进薄膜的生长而改善晶体质量和性质的
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| 关 键 词： | 氢化物气相外延(HVPE) GaN 氮化 额外HCl |
| 文章编号： | 0253-4177(2003)11-1171-05 |
| 修稿时间： | 2002年11月30日 |
Effect of Additional HCl and Substrate Nitridation on GaN Films Grown by HVPE |
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| Xiu Xiangqian,Zhang Rong,Li Jie,Lu Dianqing,Bi Zhaoxia,Ye Yuda,Yu Huiqiang and Zheng Youdou.Effect of Additional HCl and Substrate Nitridation on GaN Films Grown by HVPE[J].Chinese Journal of Semiconductors,2003,24(11):1171-1175. |
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| Authors: | Xiu Xiangqian Zhang Rong Li Jie Lu Dianqing Bi Zhaoxia Ye Yuda Yu Huiqiang and Zheng Youdou |
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| Abstract: | A new way to improve the quality and reproducibility of GaN film in hydride vapor phase epitaxy (HVPE) system is reported by introducing the additional HCl to the growth surface in the initial step of nucleation.In addition,substrate nitridation is often used in the growth technique of GaN.The effect of additional HCl and nitridation on the optical properties,structure and surface morphology of HVPE GaN films is studied.The results show that the quality of HVPE GaN films is improved in deed.But probably they have different formation mechanism on the growth of GaN films. |
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| Keywords: | hydride vapor phase epitaxy (HVPE) GaN additional HCl nitridation |
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