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Radiation hardness of polysiloxane scintillators analyzed by ion beam induced luminescence |
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| Authors: | A Quaranta S Carturan A Antonaci VL Kravchuk F Gramegna |
| Affiliation: | a University of Trento, Dipartimento di Ingegneria dei Materiali e delle Tecnologie Industriali - DIMTI, Via Mesiano 77, I-38050 Povo, Trento, Italy b Università di Padova, Laboratori Nazionali di Legnaro, Via dell’Università 2, I-35020 Legnaro, Padova, Italy c INFN, Laboratori Nazionali di Legnaro, Via dell’Università 2, I-35020 Legnaro, Padova, Italy d Università di Bologna, Dipartimento di Fisica, Viale Carlo Berti Pichat 6, I-40127 Bologna, Italy |
| Abstract: | The radiation hardness of polysiloxane based scintillators has been measured by ion beam induced luminescence (IBIL). The light intensity as a function of the irradiation fluence with an He+ beam at 1.8 MeV (1.0 μA/cm2) has been measured on undoped polymers synthesized with different amounts of phenyl units and on polysiloxanes doped with two different dye molecules (BBOT and Lumogen Violet) sensitizing the scintillation yield. |
| Keywords: | Ion beam induced luminescence Organic scintillators Polysiloxane |
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