| 多步热处理对未掺杂LEC SI-GaAs特性的影响 |
| |
| 引用本文： | 李光平,杨瑞霞.多步热处理对未掺杂LEC SI-GaAs特性的影响[J].固体电子学研究与进展,1996,16(1):64-67. |
| |
| 作者姓名： | 李光平 杨瑞霞 |
| |
| 作者单位： | 天津电子材料研究所,河北工学院 |
| |
| 摘 要： | 对未掺杂ＬＥＣＳＩ－ＧａＡｓ进行了“三步热处理”。用霍尔测量、光激电流谱测量和化学腐蚀方法研究了这种热处理对电阻率、迁移率、电活性缺陷、位错密度及Ａｓ沉淀的影响。
|
| 关 键 词： | 多步热处理 半绝缘砷化镓 As沉淀 |
The Effect of Multi-step Wafer Annealing on the Characteristic of Undoped LEC SI-GaAs |
| |
| Li Guangping,Ru Qiongna,Li Jing.The Effect of Multi-step Wafer Annealing on the Characteristic of Undoped LEC SI-GaAs[J].Research & Progress of Solid State Electronics,1996,16(1):64-67. |
| |
| Authors: | Li Guangping Ru Qiongna Li Jing |
| |
| Abstract: | Three-step wafer annealing"of undoped LEC SI-GaAs has been performed.The effect of this kind of annealing on resistivity,mobility,electric-active defect,dislocation density and As precipitation have been studied by using Hall effect,photostimulation current and chemical ecthing methods respectivily. |
| |
| Keywords: | Multi-step Wafer Annealing Semi-insulating GaAs As Precipitation |
| 本文献已被 CNKI 维普 等数据库收录！ |
