Electron beam lithography — influence of molecular characteristics on the performance of positive resists |
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| Authors: | Varinder K. Sharma Stanley Affrossman Richard A. Pethrick |
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| Affiliation: | Department of Pure and Applied Chemistry, University of Strathclyde, Thomas Graham Building, 295 Cathedral Street, Glasgow Gl 1XL, Scotland |
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| Abstract: | ![]()
Polymers are widely used as resists in electron beam lithography. This paper is concerned with theoretical modelling of the electron beam lithographic process and establishing criteria which need to be satisfied for a polymer to behave as a good positive resist. The effects of molecular weight, tacticity, solvent selection and sequence structure are discussed. Criteria are presented upon which the design of a new resist material may be based. |
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| Keywords: | positive resists electron beam lithography resist modelling |
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