Volatile component loss and contact resistance of metals on GaAs and GaP during annealing |
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| Authors: | I. Mojzes T. Sebestyen D. Szigethy |
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| Affiliation: | Research Institute for Technical Physics of the Hungarian Academy of Sciences, H-1325, Budapest, Ujpest 1, P.O. Box 76, Hungary |
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| Abstract: | This work is devoted to a mass spectrometric study of volatile component loss and in situ measurement of the resistance of metallized GaAs and GaP samples during heat treatment. Arsenic losses during heat treatment have been determined quantitatively with a quadrupole mass spectrometer. A relation was found between the arsenic loss and the specific contact resistance of the metallized sample. The associated activation energy was found to be similar to the case of thin film diffusion. |
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