| N_2和NH_3退火对铪铝氧栅介质C-V特性的影响 |
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| 引用本文： | 施煜,刘晗,董琳,孙清清,丁士进,叶培德,张卫.N_2和NH_3退火对铪铝氧栅介质C-V特性的影响[J].固体电子学研究与进展,2009,29(2). |
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| 作者姓名： | 施煜 刘晗 董琳 孙清清 丁士进 叶培德 张卫 |
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| 作者单位： | 1. 复旦大学专用集成电路国家重点实验室,微电子学系,上海,200433
2. 美国普度大学电气与计算机工程学院,印第安纳州,47907,美国 |
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| 基金项目： | 国家自然科学基金资助项目 |
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| 摘 要： | 采用原子层淀积(ALD)的方法在Si(100)衬底上制备了铪铝氧(HfAlO)高介电常数介质,并研究了N2和NH3退火对于介质薄膜的影响。改变原子层淀积的工艺,制备了三组含有不同Al∶Hf原子比的铪铝氧(HfAlO)高介电常数介质。电容电压特性(C-V)测试表明,薄膜的积累电容密度随着薄膜中Al∶Hf原子比的减少而增加。实验表明,用N2和NH3对样品进行淀积后退火,可以减小等效电容厚度(CET)、降低固定正电荷密度以及减小滞回电压,从而有效地提高了介质薄膜的电学特性。
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| 关 键 词： | 铪铝氧介质 原子层淀积 淀积后退火 电容-电压特性 |
Study on C-V Characterization of Hafnium Aluminate Gate Dielectric Annealed in N_2 and NH_3 |
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| SHI Yu,LIU Han,DONG Lin,SUN Qingqing,DING Shijin,YE Peide,ZHANG Wei.Study on C-V Characterization of Hafnium Aluminate Gate Dielectric Annealed in N_2 and NH_3[J].Research & Progress of Solid State Electronics,2009,29(2). |
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| Authors: | SHI Yu LIU Han DONG Lin SUN Qingqing DING Shijin YE Peide ZHANG Wei |
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| Affiliation: | 1State Key Laboratory of ASIC and System;Dep.of Microelectronics;Fudan University;Shanghai;200433;CHN;2School of Electrical and Computer Engineering and Birck Nanotechnology Center;Purdue University;West Lafayette;Indiana;47907;USA |
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| Abstract: | HfAlO high-k dielectrics are deposited on Si(100)by atomic layer deposition and the effects of N2 and NH3 post-deposition anneal are investigated.Through the change of ALD process,we can deposit three kinds of HfAlO film with different Al∶Hf atomic ratio.The capacitance-voltage(C-V)characteristics indicate that accumulation capacitance density increases with the decrease of Al∶Hf atomic ratio in HfAlO film.In addition,electrical characteristics can be improved by the N2 and NH3 anneal.Analytical results show that N2 and NH3 anneal can effectively reduce capacitance equivalent thickness(CET),passivate bulk traps and decrease positive fixed charge. |
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| Keywords: | HfAlO ALD post-deposition anneal capacitance-voltage characteristics |
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