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| 高压RESURF LDMOST的开态电阻与关态电压 | |
| 引用本文： | 熊平 卢豫曾. 高压RESURF LDMOST的开态电阻与关态电压[J]. 微电子学, 1995, 25(5): 23-29 |
| 作者姓名： | 熊平 卢豫曾 |
| 作者单位： | 电子科技大学微电子所 |
| 摘 要： | 降低表面电场原理可大大提高ＬＤＭＯＳＴ的器件性能。本文详细研究了用ＲＥＳＵＲＦ原理设计的ＬＤＭＯＳＴ的开态电阻与击穿电压的理论分析模型，并根据这一模型对ＲＥＳＵＲＦ ＬＤＭＯＳＴ的优化设计深入的讨论。最后评价了高压ＲＥＳＵＲＦ ＬＤＭＯＳＴ在保持器件耐压不变时降低其开态电阻的几种方法。 |
| 关 键 词： | LDMOST 高压器件 功率IC 降低表面电场 |
The On -Resistance and off-Voltage of High-Voltage RESURF LDMOS Transistors |
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| Xiong Ping, and Lu Yuzeng. The On -Resistance and off-Voltage of High-Voltage RESURF LDMOS Transistors[J]. Microelectronics, 1995, 25(5): 23-29 | |
| Authors: | Xiong Ping Lu Yuzeng |
| Abstract: | Theoretical models to calculate the on-resistance and break-down voltage of RESURF LDMOST's are examined at large in the paper.Optimization of RESURF LDMOST's based on the model is disaussed in detail.Finally,an evaluation is made on the performances of the improved LDMOST's. |
| Keywords: | RESURF LDMOST High -voltage device Power IC |
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