A low-power high-performance SiGe BiCMOS 802.11a/b/g transceiver IC for cellular and bluetooth Co-existence applications |
| |
Authors: | Charlon O. Locher M. Visser H.A. Duperray D. Chen J. Judson M. Landesman A.L. Hritz C. Kohlschuetter U. Yifeng Zhang Ramesh C. Daanen A. Minzhan Gao Haas S. Maheshwari V. Bury A. Nitsche G. Wrzyszcz A. Redman-White W. Bonakdar H. Rachid El Waffaoui Bracey M. |
| |
Affiliation: | Philips Semicond., San Jose, CA, USA; |
| |
Abstract: | This paper describes a high-performance WLAN 802.11a/b/g radio transceiver, optimized for low-power in mobile applications, and for co-existence with cellular and Bluetooth systems in the same terminal. The direct-conversion transceiver architecture is optimized in each mode for low-power operation without compromising the challenging RF performance targets. A key transceiver requirement is a sensitivity of -77 dBm (at the LNA input) in 54 Mb/s OFDM mode while in the presence of a GSM1900 transmitter interferer. The receiver chain achieves an overall noise figure of 2.8/3.2 dB, consuming 168/185 mW at 2.8 V for the 2.4/5GHz bands, respectively. Signal loopback and transmit power detection techniques are used in conjunction with the baseband modem processor to calibrate the transmitter LO leakage and the transceiver I/Q imbalances. Fabricated in a 70 GHz f/sub T/ 0.25-/spl mu/m SiGe BiCMOS technology for system-in-package (SiP) use, the dual-band, tri-mode transceiver occupies only 4.6 mm/sup 2/. |
| |
Keywords: | |
|
|