| As离子注入形成硅化钨的研究 |
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| 引用本文： | 王忠烈,钱亚宏,丁训良,胡仁元,刘伊黎. As离子注入形成硅化钨的研究[J]. 核技术, 1986, 0(8) |
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| 作者姓名： | 王忠烈 钱亚宏 丁训良 胡仁元 刘伊黎 |
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| 作者单位： | 北京师范大学低能核物理研究所(王忠烈,钱亚宏,丁训良,胡仁元),北京师范大学低能核物理研究所(刘伊黎) |
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| 摘 要： | 大规模集成电路的发展使集成度不断提高,器件尺寸减小,线条变窄。现常用的多晶硅栅和互连,由于电阻率高,限制了集成电路的速度。近年发展起来的硅化物材料,因其电阻率低、稳定性好、自对准性能好而常被用作大规模集成电路中的欧姆接触,互连和肖特基势垒。
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| 关 键 词： | 硅化钨 离子束混合 烧结 硅化物的相 |
Study of tungsten silicide formed by As ion implantation |
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| Wang Zhonglie Qian Yahong Ding XunliangHu Ren yuan Liu Yili. Study of tungsten silicide formed by As ion implantation[J]. Nuclear Techniques, 1986, 0(8) |
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| Authors: | Wang Zhonglie Qian Yahong Ding XunliangHu Ren yuan Liu Yili |
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| Abstract: | Tungsten silicide was formed by ion beam mixing at different temperatures and its crystallographic structure was investigated. The comparison was made between the sili-cides of directly sintering and of ion-beam-induced. It was found that the temperature of forming tungsten silicide was decreased by ion beam mixing. A "three-step" model was given in an attempt to explain the mechanism of silicide induced by ion beam. |
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| Keywords: | tungsten silicide ion beam mixing sintering silicide phase |
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