Growth and characterization of CuInxGa1−xTe2 used for photovoltaic conversion |
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| Authors: | M Benabdeslem L Bechiri N Benslim L Mahdjoubi EB Hannech M Zouiti G Nouet |
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| Affiliation: | aLaboratoire des Surfaces et Interfaces (LSIMS), Université d’ Annaba (Algérie), France;bCRISMAT-ISMRA, Université, 6-Boulevard du Maréchal Juin, 14050 Caen, France |
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| Abstract: | Bulk and thin films of CuIn0.75Ga0.25Te2 have been grown using respectively the sealed quartz ampoule and the flash evaporation techniques. X-ray diffraction results showed that the semiconductor has the chalcopyrite structure. The gaps of the materials were determined from optical measurements and found to be 0.99 and 1.14 eV, respectively for bulk and annealed films. Photoluminescence data showed a broad emission localised at 1.05 eV. |
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| Keywords: | Ingot Fusion Film Lash evaporation Chalcopyrite Defect Photoluminescence |
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