退火对Al2O3薄膜结构和发光性能的影响

氧化铝(Al2O3)薄膜具有许多优良的物理化学性能,在机械、光学及微电子等高科技领域有着广泛应用,一直受到人们的高度关注.但Al2O3具有多种物相形态,性质差别很大.因此研究不同结构对其发光性能的影响在Al2O3实际应用中有着重要意义.本文采用射频磁控溅射技术在单晶硅衬底上制备了Al2O3薄膜,并在氮气中进行了不同温度的退火,对比了退火前后薄膜的结构和光致发光特性.观察到了在384nm和401nm附近的两个荧光峰,这两个发光峰都是由色心引起的.随着退火温度的升高,Al2O3薄膜的结晶质量变好,同时荧光峰峰位发生了相应的变化,强度也发生了明显的变化.

Effect of Annealing on Structure and Fluorescence Property of Al2O3 Film

Aluminium oxide (Al2O3) thin films are widely used in mechanical, optical and microelectronic applications and have attracted more and more attention because of their excellent physical and chemical properties. However, Al2O3 has a variety of phases and their properties are different. So, the study of the effect of different structures on the luminenscence properties of Al2O3 is of significance in the practical application. The Al2O3 thin films are grown on silicon substrates by radio frequency (RF) magnetron sputtering and are annealed in the nitrogen gas at different temperatures. The structures and photoluminescence (PL) spectra of these films are compared with each other before and after annealing. Two fluorescence peaks are observed near 384nm and 401nm. Both fluorescence peaks are generated by the color center. With the increasing of annealing temperature, the crystallization of the films becomes better. At the same time, the position and intensity of the fluorescence peaks are changed correspondingly, too.