基于反熔丝结构的低成本嵌入式一次可编程4-kbit 存储器宏

A 4-kbit low-cost one-time programmable （OTP） memory macro for embedded applications is designed and implemented in a 0.18-μm standard CMOS process. The area of the proposed 1.5 transistor （1.5T） OTP cell is 2.13 μm2, which is a 49.3% size reduction compared to the previously reported cells. The 1.5T cell is fabricated and measured and shows a large programming window without any disturbance. A novel high voltage switch （HVSW） circuit is also proposed to make sure the OTP macro, implemented in a standard CMOS process, works reliably with the high program voltage. The OTP macro is embedded in negative radio frequency identification （RFID） tags. The full chip size, including the analog front-end, digital controller and the 4-kbit OTP macro, is 600 × 600 μm2. The 4-kbit OTP macro only consumes 200 × 260 μm^2. The measurement shows a 100% program yield by adjusting the program time and has obvious advantages in the core area and power consumption compared to the reported 3T and 2T OTP cores.

A 4-kbit low-cost antifuse one-time programmable memory macro for embedded applications

OTP 1.5 transistor cell high voltage switch RF1D size reduction