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| 金属有机化学气相沉积W薄膜 | |
| 引用本文： | 李一,李金普,贾成厂,柳学全,李发长,李楠. 金属有机化学气相沉积W薄膜[J]. 粉末冶金技术, 2011, 29(5): 334-338 |
| 作者姓名： | 李一 李金普 贾成厂 柳学全 李发长 李楠 |
| 作者单位： | 1. 北京科技大学材料科学与工程学院,北京100083;钢铁研究总院粉末冶金研究室,北京100081 2. 北京科技大学材料科学与工程学院,北京,100083 3. 钢铁研究总院粉末冶金研究室,北京,100081 |
| 基金项目： | 国家高技术研究发展计划资助项目(2009AA03Z116) |
| 摘 要： | 以W(CO)6为前驱体,采用金属有机化学气相沉积法(MOCVD)在Cu基体表面进行了沉积W薄膜的研究.通过调整W(CO)6热解温度、W(CO)6气化温度及载气(高纯氢气)的流量等工艺参数,成功制备了均匀、致密的W薄膜；研究了沉积速率与上述参数之间的关系,并得出了在本试验条件下应用金属有机化学气相沉积法(MOCVD)制备... |
| 关 键 词： | 金属有机化学气相沉积(MOCVD) 六羰基钨(W(CO)6) 薄膜 |
A research on the technique for tungsten films by metal-organic chemical vapor deposition |
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| Li Yi,Li Jinpu,Jia Chengchang,Liu Xuequan,Li Fachang,Li Nan. A research on the technique for tungsten films by metal-organic chemical vapor deposition[J]. Powder Metallurgy Technology, 2011, 29(5): 334-338 | |
| Authors: | Li Yi Li Jinpu Jia Chengchang Liu Xuequan Li Fachang Li Nan |
| Affiliation: | Li Yi1),2),Li Jinpu1),Jia Chengchang1),Liu Xuequan2),Li Fachang1),Li Nan2) 1)(School of Materials Science and Engineering,University of Science and Technology Beijing,Beijing 100083,China) 2)(Powder Metallurgy Laboratory,Genaral Research Institute for Iron and Steel,Beijing 100081,China) |
| Abstract: | Tungsten films were prepared successfully by metal-organic chemical vapor desposition(MOCVD) method using tungsten carbonyl as precursors on copper substrates in order to develop new tungsten materials.The effects of substrate temperature,precursor temperature and flux of hydrogen on deposition rates of tungsten films were determined by changing the above parameters during the growth process,and the optimum technological process was investigated. |
| Keywords: | metal-organic chemical vapor desposition tungsten carbonyl films |
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