| 立方相InGaN的稳态和瞬态光学特性研究 |
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| 引用本文： | 徐仲英,刘宝利,李顺峰,杨辉,葛惟昆.立方相InGaN的稳态和瞬态光学特性研究[J].红外与毫米波学报,2000,19(1):11. |
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| 作者姓名： | 徐仲英 刘宝利 李顺峰 杨辉 葛惟昆 |
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| 作者单位： | 1. 中国科学院半导体研究所,北京,100083
2. 香港科技大学物理系 |
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| 基金项目： | ：国家攀登计划和国家自然科学基金(编号：19974045)资助项目 |
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| 摘 要： | 用光荧光和时间分辨光谱技术研究了MEB生长立方In
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| 关 键 词： | InGaN 激子局域化 时间分辨光谱. |
| 修稿时间： | 1999-10-08 |
STEADY AND TRANSIENT OPTICAL PROPERTIES OF CUBIC InGaN EPILAYERS |
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| XU Zhong-Ying,LIU Bao-Li,LI Shun-Feng,YANG Hui,GE Wei-Kun.STEADY AND TRANSIENT OPTICAL PROPERTIES OF CUBIC InGaN EPILAYERS[J].Journal of Infrared and Millimeter Waves,2000,19(1):11. |
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| Authors: | XU Zhong-Ying LIU Bao-Li LI Shun-Feng YANG Hui GE Wei-Kun |
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| Abstract: | Photoluminescence (PL) and time resolved PL were employed to study the steady and transient optical properties of cubic In xGa 1-x N epilayers grown by MBE. The results suggest that the PL transitions in InGaN epilayers are mainly from localized exciton states. The localization energies are estimated to be 60 meV, independent of In composition. The PL decay is characterized by a bi exponential dependence. The fast process (50 ps at 12K) is related to the fast relaxation of excitons, while a slower contribution (200-270 ps at 12K) is attributed to the decay process of localized excitons. |
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| Keywords: | InGaN exciton localization time resolved photoluminescence |
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