Electrical properties and energy-storage performance of (Pb0.92Ba0.05La0.02)(Zr0.68Sn0.27Ti0.05)O3 antiferroelectric thick films prepared by tape-casing method |
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| Affiliation: | 1. Division of Computational Mechatronics, Institute for Computational Science, Ton Duc Thang University, Ho Chi Minh City, Viet Nam;2. Faculty of Electrical & Electronics Engineering, Ton Duc Thang University, Ho Chi Minh City, Viet Nam;3. MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, 7500AE Enschede, The Netherlands |
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| Abstract: | The energy-storage performance and dielectric properties of tape-cast (Pb0.92Ba0.05La0.02)(Zr0.68Sn0.27Ti0.05)O3 (PBLZST) antiferroelectric (AFE) thick films with different thicknesses were systematically studied. As the thickness of the thick films increased from 40 to 80 µm, the dielectric constant and saturation polarization (Ps) of the thick films were gradually increased, while their corresponding breakdown strength (BDS) was decreased. A maximum recoverable energy-storage density of 6.8 J/cm3, companied by an efficiency of 61.2%, was achieved in the PBLZST AFE thick film with a thickness of 40 µm at room temperature. Moreover, the energy density of the PBLZST AFE thick films also displayed good thermal stability over 25–200 °C. In addition, all the samples had a low leakage current density of ~10?6 A/cm2 at room temperature. These findings demonstrated that the PBLZST thick films should be a promising candidate for applications in high energy-storage capacitors. |
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| Keywords: | Antiferroelectric Thick films Tape casting Energy storage Electrical properties |
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