| 掺硼（B）非晶硅（a－Si：H）材料固相晶化（SPC）的研究 |
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| 引用本文： | 于振瑞,耿新华,孙云,刘世国,孙钟林,徐温元.掺硼（B）非晶硅（a－Si：H）材料固相晶化（SPC）的研究[J].太阳能学报,1994(2). |
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| 作者姓名： | 于振瑞 耿新华 孙云 刘世国 孙钟林 徐温元 |
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| 作者单位： | 南开大学光电子薄膜器件与技术研究所 |
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| 摘 要： | 对掺硼（Ｂ）材料的固相晶化进行了研究。通过对不同掺Ｂ浓度的ａ－Ｓｉ：Ｈ样品退火前后的Ｘ射线衍射、光吸收系数、电导率、激活能及Ｈａｌｌ迁移率的测量发现，Ｂ原子在固相晶化过程中起晶核作用，晶化后的样品具有较高的迁移率及电导率，同时具有较大的禁带宽度。当接Ｂ浓度仅为０．１７％时，晶化后样品的电导率为４．３５ｓｃｍ－１，迁移率为１４０ｃｍ２Ｖ－１ｓ－１，禁带宽度Ｅ０４＝２．１６ｅＶ。该材料是一种较好的太阳电池窗口材料。
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| 关 键 词： | 固相晶化，孵化时间，晶核，窗口层 |
INVESTIGATIONS ON THE SOLID-PHASE CRYSTALLIZATION OF B-DOPED a-Si:H FILMS |
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| Yu Zhen-rui,Geng Xin-hua,Sun Yun,Liu Shi-guo,Sun Zhong-lin,Xu Wen-yuan.INVESTIGATIONS ON THE SOLID-PHASE CRYSTALLIZATION OF B-DOPED a-Si:H FILMS[J].Acta Energiae Solaris Sinica,1994(2). |
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| Authors: | Yu Zhen-rui Geng Xin-hua Sun Yun Liu Shi-guo Sun Zhong-lin Xu Wen-yuan |
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| Abstract: | The effects of B atoms on the solid phase crystallization of PECVD a-Si:H films is investigated by using the X-Ray diffraction,Hall measurements.optical reflection transmission measurements and conductivity measurements.It is found that the B atoms acts as nuclei in the SPC process.The crystallized films have high conductivity and high Hall mobility. The optical band gap of the crystallized films E04=2.16.This figure is larger than that of a-SiC:H window layers.The p-type Poly-Si layers prepared by SPC method is a suitable window material for solar cell. |
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| Keywords: | solid phase crystallization incubation time nuclei window layers |
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