High-performance strain-compensated InGaAs-GaAsP-GaAs(λ=1.17 μm) quantum well diode lasers |
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Authors: | Tansu N Mawst LJ |
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Affiliation: | Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI; |
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Abstract: | This letter reports studies on highly strained and strain-compensated InGaAs quantum-well (QW) active diode lasers on GaAs substrates, fabricated by low-temperature (550°C) metal-organic chemical vapor deposition (MOCVD) growth. Strain compensation of the (compressively strained) InGaAs QW is investigated by using either InGaP (tensile-strained) cladding layer or GaAsP (tensile-strained) barrier layers. High-performance λ=1.165 μm laser emission is achieved from InGaAs-GaAsP strain-compensated QW laser structures, with threshold current densities of 65 A/cm2 for 1500-μm-cavity devices and transparency current densities of 50 A/cm2. The use of GaAsP-barrier layers are also shown to significantly improve the internal quantum efficiency of the highly strained InGaAs-active laser structure. As a result, external differential quantum efficiencies of 56% are achieved for 500-μm-cavity length diode lasers |
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