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锗单晶的位错研究
引用本文:闫洪,朱良,陈绍兰,杨祖贵. 锗单晶的位错研究[J]. 电子质量, 2012, 0(11): 66-67
作者姓名:闫洪  朱良  陈绍兰  杨祖贵
作者单位:1. 昆明冶金研究院,云南昆明,650031
2. 昆明冶研新材料股份有限公司,云南昆明,650031
摘    要:
采用金相分析方法研究了锗单晶的位错,腐蚀试剂的选择对位错的显示有较大影响。实验表明,铁氰化钾腐蚀液能清晰地显示出锗单晶的位错,其位错腐蚀坑的形状是三角形,经过计算,锗单晶的位错密度大约为11 339根/cm2。

关 键 词:锗单晶  位错形状和密度  金相分析

Study on the Dislocation of Germanium Single Crystal
Yan Hong,Zhu Liang,Chen Shao-lan,Yang Zu-gui. Study on the Dislocation of Germanium Single Crystal[J]. Electronics Quality, 2012, 0(11): 66-67
Authors:Yan Hong  Zhu Liang  Chen Shao-lan  Yang Zu-gui
Affiliation:Yan Hong,Zhu Uang, Chen Shao-lan, Yang Zu-gu(].Kunming Institute of Metallurgy, Yunnan Kurtming 650031;2.Kunming Metallurgy Research New Material Co.,Ltd.,Yunnan Kunming 650031)
Abstract:
The dislocation of germanium single crystal was studied by metallographic examination method.The test indicate that the exhibition of the dislocation would be affected by corrosive agents.The exhibition of the dislocation was clear when the crystal was corroded by the potassium ferricyanide cor rosive agents.Shape of dislocation corrosive pit was triangle,The dislocation desity was 11 339root/cm2 by calculation.
Keywords:Germanium single crystal  Dislocation shape and density  Metallographic examination
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