| InGaN/GaN多量子阱纳米线发光二极管制备及研究 |
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| 引用本文： | 曹瑞华,殷垚,陈鹏,万青,濮林,施毅,郑有炓. InGaN/GaN多量子阱纳米线发光二极管制备及研究[J]. 固体电子学研究与进展, 2011, 31(1): 24-28 |
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| 作者姓名： | 曹瑞华 殷垚 陈鹏 万青 濮林 施毅 郑有炓 |
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| 作者单位： | 1. 南京大学电子信息与工程学院,南京,210093
2. 湖南大学物理系,长沙,410082 |
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| 基金项目： | 国家"973"计划项目，国家自然科学基金，江苏省自然科学基金 |
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| 摘 要： | 用SiO2纳米图形层作为模板在以蓝宝石为衬底的n-GaN单晶层上制备了InGaN/GaN多量子阱纳米线,并成功实现了其发光二极管器件(LED).场发射扫描电子显微镜(FESEM)的测量结果表明,InGaN/GaN多量子阱纳米线具有光滑的表面形貌和三角形的剖面结构.室温下阴极射线荧光谱(CL)的测试发现了位于461 nm...
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| 关 键 词： | 铟镓氯/氮化镓多量子阱纳米线 阴极射线荧光谱 发光二极管 |
Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode |
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| CAO Ruihua,YIN Yao,CHEN Peng,WAN Qing,PU Lin,SHI Yi,ZHENG Youdou. Fabrication and Investigation of InGaN/GaN Multi-quantum-well Nanowire Light Emitting Diode[J]. Research & Progress of Solid State Electronics, 2011, 31(1): 24-28 |
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| Authors: | CAO Ruihua YIN Yao CHEN Peng WAN Qing PU Lin SHI Yi ZHENG Youdou |
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| Abstract: | InGaN/GaN multi-quantum-well(MQW) nanowires and accordingly light-emitting-diodes(LEDs) were fabricated on n-GaN/sapphire substrate with a nano-patterned SiO2 film as growth mask.Field-emission scan electron microscopy(FESEM),cathodoluminescence(CL) and I-V measurements were used to investigate the structural characteristics,optical and electrical properties.The observed results show that InGaN/GaN MQW nanowire has smooth surface morphologies and triangular cross sectional structure.A strong CL emission peak centered at around 461 nm shifts to high energy compared to the one from the sample with film MQW structure.In addition,InGaN/GaN MQW nanowire LED shows typical p-n junction characteristics with a turn-on voltage of 4.28 V at the 20 mA operation current,and its electroluminescence displays purplish compared to the green luminescence of MQW LED. |
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| Keywords: | InGaN/GaN MQW nanowire cathodoluminescence light emitting diode |
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