P-type doping utilizing nitrogen and Mn doping of ZnO using MOCVD for ultraviolet lasers and spintronic applications

ZnO has distinct advantages over competing technologies such as GaN. Two advantages are the inherent improvement in ultraviolet (UV) brightness, necessary for the biological sensor application where the signal-to-noise ratio (SNR) is enhanced by a bright UV source, and the second is the availability of ZnO lattice-matched substrates, which will result in lower defect densities than GaN, higher manufacturing yield, and then lower cost. The ZnO material system’s advantage in exciton binding energy of 60 MeV, a three-time improvement over GaN, will result in UV emitters with superior performance.¹ An erratum to this article is available at .