Dynamic current-voltage characteristics of III-N HFETs |
| |
| Authors: | Koudymov A. Simin G. Khan M.A. Tarakji A. Gaska R. Shur M.S. |
| |
| Affiliation: | Dept. of Electr. Eng., Univ. of South Carolina, Columbia, SC, USA; |
| |
| Abstract: | ![]()
A comparative study of the dynamic current-voltage (DI-V) characteristics of III-N heterojunction and double heterojunction field-effect transistors (HFETs and DHFETs) reveals that the current and RF power collapse in HFETs arise from modulation of device series resistances under large input signal. A model based on space-charge limited current through the depletion regions formed at the gate edges due to the charge trapping explains the DI-V behavior and other observations related to the RF current collapse in III-N HFETs. |
| |
| Keywords: | |
|
|
