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Recombination of charge carriers in the GaAs-based p-i-n diode
Authors:G. I. Ayzenshtat  A. Y. Yushenko  S. M. Gushchin  D. V. Dmitriev  K. S. Zhuravlev  A. I. Toropov
Affiliation:1.Tomsk State University,Tomsk,Russia;2.Tomsk State University of Control Systems and Radioelectronics,Tomsk,Russia;3.OAO Research Institute of Semiconductor Devices,Tomsk,Russia;4.Institute of Semiconductor Physics,Russian Academy of Sciences,Novosibirsk,Russia
Abstract:
It is established that the radiative recombination of charge carriers plays a substantial role in the GaAs-based p-i-n diodes at high densities of the forward current. It is shown experimentally that the diodes operating in microwave integrated circuits intensely emit light in the IR range with wavelengths from 890 to 910 nm. The obtained results indicate the necessity of taking into account the features of recombination processes in the GaAs-based microwave p-i-n diodes.
Keywords:
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