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Electrical and photoluminescence properties of evaporated CuIn1−xGaxTe2 thin films |
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| Authors: | L Bchiri L Mahdjoubi R Madelon G Nouet |
| Affiliation: | a LCCM. Institut de physique. Université de Annaba . BP. 12, 23200 Sidi Amar, Algeria;b LERMAT, FRE 2149-CNRS, ISMRA, 6 Boulevard du Maréchal Juin, 14050, Caen Cedex, France;c Institut des Sciences de la Matiere, et du Rayonnement, ESCTM-CRISMAT, UMR CNRS 6508, ISMRA, 6 Boulevard du Maréchal Juin, 14050, Caen Cedex, France |
| Abstract: | Polycrystalline thin films of CuIn1−xGaxTe2 have been deposited by flash evaporation on Corning glass 7059 substrates at Ts=200°C. Hall and resistivity measurements have been carried out down to 77 K. These films are p-type and the variation of the resistivity may be linked to defects, disorder of the material or grain boundaries. The PL spectra of these films after annealing in argon atmosphere at Ta=450°C have showed a broad band emission between 0.98 and 1.12 eV in which the main peak appears at 1.05 eV (at 4.2 K). |
| Keywords: | Chalcopyrite Photoluminescence Defects |
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